onsemi FDMQ8403

onsemi · FETs & Power MOSFETs · MPN FDMQ8403

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)6A
RDS(on)110mΩ@10V
Pd - Power Dissipation1.9W
Gate Threshold Voltage (Vgs(th))2.8V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number4 N-Channel
Input Capacitance(Ciss)215pF
Gate Charge(Qg)5nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 100V 6A 1.9W Surface Mount MLP-12(4.5x5)

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