onsemi FDMQ8203

onsemi · FETs & Power MOSFETs · MPN FDMQ8203

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Specifications

ConfigurationFull-Bridge
Current - Continuous Drain(Id)6A
RDS(on)190mΩ@10V
Pd - Power Dissipation22W
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)5pF
Number2 N-Channel + 2 P-Channel
Input Capacitance(Ciss)210pF
Gate Charge(Qg)5nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 100V 6A 22W Surface Mount MLP-12(4.5x5)

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