onsemi · FETs & Power MOSFETs · MPN FDME820NZT
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| Gate Charge(Qg) | 8.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 18mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 865pF |
N-Channel 20V 9A 2.1W Surface Mount MicroFET(1.6x1.6)