onsemi · FETs & Power MOSFETs · MPN FDME1023PZT
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| Gate Charge(Qg) | 7.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 600mW |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 95mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 405pF |
20V 2.6A 1V 600mW 95mΩ@4.5V 2 P-Channel MicroFET(1.6x1.6) Single FETs, MOSFETs RoHS