onsemi FDMD8680

onsemi · FETs & Power MOSFETs · MPN FDMD8680

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Specifications

Drain to Source Voltage80V
Current - Continuous Drain(Id)66A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)77pF
RDS(on)4.7mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)5.33nF

Technical details

N-Channel Array 80V 66A 39W Surface Mount PDFN-8(5x6)

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