onsemi · FETs & Power MOSFETs · MPN FDMD8630
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| Gate Charge(Qg) | 142nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 38A;167A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.3W;43W |
| RDS(on) | 1mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 9.93nF |
30V 3V 1mΩ@10V 2 N-Channel PQFN-8 Single FETs, MOSFETs RoHS