onsemi · FETs & Power MOSFETs · MPN FDMD8540L
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| Configuration | Half-Bridge |
|---|---|
| Gate Charge(Qg) | 81nC@10V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.668nF |
| Current - Continuous Drain(Id) | 156A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 62W |
| Reverse Transfer Capacitance (Crss@Vds) | 135pF |
| RDS(on) | 1.5mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 7.94nF |
40V 156A 1.8V 62W 1.5mΩ@10V 2 N-Channel N-Channel PQFN-8-EP(5x6) Single FETs, MOSFETs RoHS