onsemi FDMD8540L

onsemi · FETs & Power MOSFETs · MPN FDMD8540L

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)81nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.668nF
Current - Continuous Drain(Id)156A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation62W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)1.5mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)7.94nF

Technical details

40V 156A 1.8V 62W 1.5mΩ@10V 2 N-Channel N-Channel PQFN-8-EP(5x6) Single FETs, MOSFETs RoHS

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