onsemi · FETs & Power MOSFETs · MPN FDMD8530
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| Gate Charge(Qg) | 149nC@10V |
|---|---|
| Configuration | Half-Bridge;Full-Bridge |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 201A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF |
| RDS(on) | 1.25mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 10.395nF |
30V 201A 1.5V 78W 1.25mΩ@10V 2 N-Channel Power(5x6) Single FETs, MOSFETs RoHS