onsemi FDMD8260L

onsemi · FETs & Power MOSFETs · MPN FDMD8260L

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Specifications

Current - Continuous Drain(Id)64A
Pd - Power Dissipation37W
RDS(on)8.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)5.245nF
Operating Temperature-55℃~+150℃

Technical details

64A 37W 8.7mΩ@4.5V 1V 2 N-Channel PQFN-12(3.3x5) FET, MOSFET Arrays RoHS

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