onsemi · FETs & Power MOSFETs · MPN FDMD8240L
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| Gate Charge(Qg) | 56nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| RDS(on) | 2.6mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.23nF |
40V 23A 3V 2.6mΩ@10V 2 N-Channel PQFN-12 Single FETs, MOSFETs RoHS