onsemi FDMD82100

onsemi · FETs & Power MOSFETs · MPN FDMD82100

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)17nC@10V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1W
RDS(on)19mΩ@10V
Input Capacitance(Ciss)1.07nF

Technical details

100V 7A 4V 1W 19mΩ@10V PQFN-12 Single FETs, MOSFETs RoHS

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