onsemi · FETs & Power MOSFETs · MPN FDMC89521L
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| Configuration | Common source |
|---|---|
| Current - Continuous Drain(Id) | 8.2A |
| Pd - Power Dissipation | 1.9W |
| RDS(on) | 27mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 60V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.635nF |
| Gate Charge(Qg) | 24nC@10V |
| Operating Temperature | -55℃~+150℃ |
8.2A 1.9W 27mΩ@4.5V 1.9V 2 N-Channel Power-33-8 FET, MOSFET Arrays RoHS