onsemi FDMC8884

onsemi · FETs & Power MOSFETs · MPN FDMC8884

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation18W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)30mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)685pF
TypeN-Channel

Technical details

30V 15A 2.5V 18W 30mΩ@4.5V 1 N-channel N-Channel DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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