onsemi · FETs & Power MOSFETs · MPN FDMC8882
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10.5A;16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2.3W;18W |
| RDS(on) | 14.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 945pF |
30V 2.5V 14.3mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS