onsemi FDMC8878

onsemi · FETs & Power MOSFETs · MPN FDMC8878

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)9.6A;16.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation2.1W;31W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)9.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.23nF

Technical details

30V 1.7V 9.6mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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