onsemi · FETs & Power MOSFETs · MPN FDMC8854
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| Gate Charge(Qg) | 57nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 435pF |
| RDS(on) | 5.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.405nF |
30V 15A 1.9V 2W 5.7mΩ@10V 1 N-channel MLP(3.3x3.3) Single FETs, MOSFETs RoHS