onsemi · FETs & Power MOSFETs · MPN FDMC86340ET80
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| Gate Charge(Qg) | 38nC |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 68A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.775nF |
80V 68A 4V 65W 6.5mΩ@10V 1 N-channel PQFN-8 Single FETs, MOSFETs RoHS