onsemi · FETs & Power MOSFETs · MPN FDMC86320
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 10.7A;22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 2.3W;40W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 11.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.64nF |
80V 4.5V 11.7mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS