onsemi · FETs & Power MOSFETs · MPN FDMC86260
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| Gate Charge(Qg) | 21nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 34mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.33nF |
150V 25A 2.7V 54W 34mΩ@10V 1 N-channel DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS