onsemi · FETs & Power MOSFETs · MPN FDMC86160ET100
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 43A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.29nF |
N-Channel 100V 43A 65W Surface Mount PQFN-8