onsemi FDMC86160

onsemi · FETs & Power MOSFETs · MPN FDMC86160

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)43A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation54W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.29nF

Technical details

N-Channel 100V 43A 54W Surface Mount Power-33

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