onsemi FDMC86116LZ

onsemi · FETs & Power MOSFETs · MPN FDMC86116LZ

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation19W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)153mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)310pF

Technical details

100V 7.5A 2.2V 19W 153mΩ@4.5V 1 N-channel MLP-8(3.3x3.3) Single FETs, MOSFETs RoHS

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