onsemi · FETs & Power MOSFETs · MPN FDMC86106LZ
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| Gate Charge(Qg) | 6nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.3A;7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 2.3W;19W |
| RDS(on) | 103mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
100V 2.2V 103mΩ@10V 1 N-channel MLP-8(3.3x3.3) Single FETs, MOSFETs RoHS