onsemi · FETs & Power MOSFETs · MPN FDMC86102
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 38mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 965pF |
100V 20A 2V 2.3W 38mΩ@6V 1 N-channel Power-33 Single FETs, MOSFETs RoHS