onsemi · FETs & Power MOSFETs · MPN FDMC8554
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 16.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 510pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.54nF |
20V 16.5A 1V 2W 5mΩ@10V 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS