onsemi · FETs & Power MOSFETs · MPN FDMC8462
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| Gate Charge(Qg) | 43nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 41W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.66nF |
40V 20A 1V 41W 5.8mΩ@10V 1 N-channel Power-33-8 Single FETs, MOSFETs RoHS