onsemi FDMC8200S

onsemi · FETs & Power MOSFETs · MPN FDMC8200S

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Specifications

Current - Continuous Drain(Id)46A
RDS(on)32mΩ@10V
Pd - Power Dissipation2.5W
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)52pF
Number2 N-Channel
Input Capacitance(Ciss)1.436nF
Gate Charge(Qg)22nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)495pF

Technical details

46A 32mΩ@10V 2.5W 3V 2 N-Channel Power-33-8 FET, MOSFET Arrays RoHS

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