onsemi FDMC8010DC

onsemi · FETs & Power MOSFETs · MPN FDMC8010DC

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)157A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)1.28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.08nF

Technical details

N-Channel 30V 157A 50W Surface Mount PQFN-8(3.3x3.3)

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