onsemi · FETs & Power MOSFETs · MPN FDMC510P
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| Gate Charge(Qg) | 116nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 41W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.11nF |
| RDS(on) | 8mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.86nF |
P-Channel 20V 18A 41W Surface Mount WDFN-8(3.3x3.3)