onsemi FDMC4D9P20X8

onsemi · FETs & Power MOSFETs · MPN FDMC4D9P20X8

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)109nC@4.5V
Current - Continuous Drain(Id)18A;75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.4W;40W
RDS(on)4.9mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)10.55nF

Technical details

20V 1.6V 4.9mΩ@4.5V 1 P-Channel PQFN-8(3.3x3.3) Single FETs, MOSFETs RoHS

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