onsemi · FETs & Power MOSFETs · MPN FDMC2610
No reviews yet — be the first to review onsemi FDMC2610.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 18nC@10V |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 42W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 200mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 960pF |
200V 4V 42W 200mΩ 1 N-channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS