onsemi · FETs & Power MOSFETs · MPN FDMC012N03
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 64W |
| Reverse Transfer Capacitance (Crss@Vds) | 132pF |
| RDS(on) | 1.23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.183nF |
30V 35A 1.3V 64W 1.23mΩ@10V 1 N-channel Power-33-8 Single FETs, MOSFETs RoHS