onsemi FDMC010N08C

onsemi · FETs & Power MOSFETs · MPN FDMC010N08C

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)11A;51A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.4W;52W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

N-Channel 80V 11A 51A 2.4W 52W Surface Mount Power-33

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