onsemi FDMC008N08C

onsemi · FETs & Power MOSFETs · MPN FDMC008N08C

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)19.3mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)2.15nF
TypeN-Channel

Technical details

N-Channel 80V 60A 57W Surface Mount PQFN-8(3.3x3.3)

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