onsemi FDMC007N30D

onsemi · FETs & Power MOSFETs · MPN FDMC007N30D

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Specifications

Operating Temperature-55℃~+150℃
Output Capacitance(Coss)230pF;467pF
Current - Continuous Drain(Id)29A
RDS(on)7mΩ@4.5V
Pd - Power Dissipation1.9W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)20pF;36pF
Number2 N-Channel
Input Capacitance(Ciss)1.11nF
Gate Charge(Qg)12nC;24nC

Technical details

N-Channel Array 30V 29A 1.9W Surface Mount WDFN-8

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