onsemi FDMB3800N

onsemi · FETs & Power MOSFETs · MPN FDMB3800N

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Specifications

Current - Continuous Drain(Id)4.8A
RDS(on)40mΩ@10V
Pd - Power Dissipation1.6W
Gate Threshold Voltage (Vgs(th))1.9V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)60pF
Number2 N-Channel
Input Capacitance(Ciss)465pF
Gate Charge(Qg)5.6nC@5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 4.8A 1.6W Surface Mount MLP-8(1.9x3)

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