onsemi · FETs & Power MOSFETs · MPN FDMB3800N
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| Current - Continuous Drain(Id) | 4.8A |
|---|---|
| RDS(on) | 40mΩ@10V |
| Pd - Power Dissipation | 1.6W |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 465pF |
| Gate Charge(Qg) | 5.6nC@5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 4.8A 1.6W Surface Mount MLP-8(1.9x3)