onsemi FDMA908PZ

onsemi · FETs & Power MOSFETs · MPN FDMA908PZ

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Specifications

Gate Charge(Qg)34nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)974pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.4W
Reverse Transfer Capacitance (Crss@Vds)903pF
RDS(on)12.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.957nF
TypeP-Channel

Technical details

P-Channel 12V 12A 2.4W Surface Mount MicroFET(2x2)

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