onsemi FDMA1029PZ

onsemi · FETs & Power MOSFETs · MPN FDMA1029PZ

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Specifications

ConfigurationCommon source
Current - Continuous Drain(Id)3.1A
RDS(on)141mΩ@2.5V
Pd - Power Dissipation1.4W
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)10nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 20V 3.1A 1.4W Surface Mount MicroFET(2x2)

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