onsemi · FETs & Power MOSFETs · MPN FDM3622
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 4.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.09nF |
N-Channel 100V 4.4A 2.1W Surface Mount WDFN-8(3.3x3.3)