onsemi · FETs & Power MOSFETs · MPN FDL100N50F
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| Gate Charge(Qg) | 238nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 2.5kW |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12nF |
| Type | N-Channel |
500V 100A 5V 2.5kW 55mΩ@10V 1 N-channel N-Channel TO-264-3 Single FETs, MOSFETs RoHS