onsemi · FETs & Power MOSFETs · MPN FDI9406_F085
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 138nC@10V |
| Output Capacitance(Coss) | 2.015nF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.71nF |
| Type | N-Channel |
40V 110A 4V 176W 2.2mΩ@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS