onsemi FDI33N25TU

onsemi · FETs & Power MOSFETs · MPN FDI33N25TU

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)48nC@10V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation235W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)94mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.135nF
TypeN-Channel

Technical details

250V 33A 5V 235W 94mΩ@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS

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