onsemi · FETs & Power MOSFETs · MPN FDI150N10
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| Gate Charge(Qg) | 53nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 57A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.58nF |
100V 57A 4.5V 12mΩ@10V 1 N-channel I2PAK(TO-262) Single FETs, MOSFETs RoHS