onsemi · FETs & Power MOSFETs · MPN FDH50N50-F133
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| Drain to Source Voltage | 500V |
|---|---|
| Gate Charge(Qg) | 137nC@10V |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 625W |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.46nF |
500V 48A 5V 625W 105mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS