onsemi FDH45N50F-F133

onsemi · FETs & Power MOSFETs · MPN FDH45N50F-F133

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Specifications

Configuration-
Gate Charge(Qg)105nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)790pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation625W
Reverse Transfer Capacitance (Crss@Vds)62pF
RDS(on)105mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.1nF

Technical details

N-Channel 500V 625W Through Hole TO-247-3

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