onsemi FDG8842CZ

onsemi · FETs & Power MOSFETs · MPN FDG8842CZ

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Specifications

Gate Charge(Qg)1.68nC@4.5V
Drain to Source Voltage25V
Current - Continuous Drain(Id)410mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)1.1Ω@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)70pF

Technical details

25V 0.41A 0.3W Surface Mount SOT-323-6L

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