onsemi · FETs & Power MOSFETs · MPN FDG8842CZ
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| Gate Charge(Qg) | 1.68nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 410mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 1.1Ω@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 70pF |
25V 0.41A 0.3W Surface Mount SOT-323-6L