onsemi · FETs & Power MOSFETs · MPN FDG6335N
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| Gate Charge(Qg) | 1.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 34pF |
| Current - Continuous Drain(Id) | 700mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| RDS(on) | 400mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 113pF |
| Type | N-Channel |
N-Channel 20V 0.7A 0.3W Surface Mount SC-70-6(SOT-363)