onsemi · FETs & Power MOSFETs · MPN FDG6322C
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| Gate Charge(Qg) | 1.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 410mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 5Ω@2.7V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 25V 0.41A 0.3W Surface Mount SC-70-6