onsemi · FETs & Power MOSFETs · MPN FDG6321C-F169
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 2.3nC@4.5V |
| Output Capacitance(Coss) | 34pF |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 450mΩ@4.5V |
| Input Capacitance(Ciss) | 50pF |
| Type | N-Channel + P-Channel |
25V 500mA 1.5V 300mW 450mΩ@4.5V N-Channel + P-Channel Single FETs, MOSFETs RoHS