onsemi · FETs & Power MOSFETs · MPN FDG6318P
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 1.2nC@4.5V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 300mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 780mΩ@4.5V |
| Input Capacitance(Ciss) | 83pF |
| Type | P-Channel |
20V 500mA 1.5V 300mW 780mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS